N-channel MOSFET switching transistor
Drain-to-Source Voltage (VDS) rating of 500V
Continuous Drain Current (ID) of 13A
Low On-Resistance (RDS) of 0.39 ohms at VGS=10V
Fast Switching: Low gate charge (Qg) and low input capacitance (Ciss) result in fast switching
High efficiency: low conduction and switching losses enable high-efficiency power conversion
Isolated TO-220 packaging
RoHS compliant
Suitable for various applications such as power supplies, motor control, and inverters.