SKW25N120 is a high voltage N-channel Fast-switching IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is a high-performance IGBT with a maximum voltage rating of 1200V and current rating of 50A.
The SKW25N120 features a low saturation voltage of 1.9V, which helps to reduce power dissipation and improve energy efficiency. The device also has a fast switching time of 55ns, making it suitable for a wide range of high-frequency applications.
The SKW25N120 is integrated with a co-packed diode, which ensures fast and efficient switching. It also has a robust and reliable design, which helps to ensure that the device is able to operate under high-temperature conditions.
Some of the applications where SKW25N120 is commonly used include photovoltaic inverters, uninterruptible power supplies, welding equipment, and different types of motor control. The device has an industry-standard TO-247 package, making it compatible with various circuit board designs.
Overall, SKW25N120 is a high-performance IGBT capable of delivering reliable and high-speed switching for various power applications. Its low saturation voltage and co-packed diode make it an ideal choice for high-power inverter designs that require fast switching and high efficiency.