High Input Impedance
Low Input Capacitance
Fast Switching Speeds
Low On-resistance
Free from Secondary Breakdown
Low Input and Output Leakage
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541290095 |
Automotive | No |
PPAP | No |
Product Category | Power MOSFET |
Material | Si |
Configuration | Single Dual Drain |
Process Technology | VDMOS |
Channel Mode | Depletion |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 350 |
Maximum Gate Source Voltage (V) | 卤20 |
Maximum Continuous Drain Current (A) | 0.135 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 180000 (Min) |
Maximum Drain Source Resistance (mOhm) | 35000@0V |
Typical Input Capacitance @ Vds (pF) | 60@25V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 3@25V |
Typical Output Capacitance (pF) | 6 |
Maximum Power Dissipation (mW) | 1300 |
Typical Fall Time (ns) | 20 (Max) |
Typical Rise Time (ns) | 15 (Max) |
Typical Turn-Off Delay Time (ns) | 15 (Max) |
Typical Turn-On Delay Time (ns) | 10 (Max) |
Minimum Operating Temperature (C) | -55 |
Maximum Operating Temperature (C) | 150 |
Packaging | Tape and Reel |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation on PCB @ TC=25C (W) | 1.3 |
Maximum Pulsed Drain Current @ TC=25C (A) | 0.3 |
Typical Reverse Recovery Time (ns) | 800 |
Maximum Diode Forward Voltage (V) | 1.8 |
Mounting | Surface Mount |
Package Height | 1.6 (Max) |
Package Width | 2.6 (Max) |
Package Length | 4.6 (Max) |
PCB changed | 3 |
Tab | Tab |
Supplier Package | SOT-89 |
Pin Count | 4 |