Email Us
Email Us
DN3135N8-G
Features Of DN3135N8-G
  • High Input Impedance

  • Low Input Capacitance

  • Fast Switching Speeds

  • Low On-resistance

  • Free from Secondary Breakdown

  • Low Input and Output Leakage

Technical Data Of DN3135N8-G


ECCN (US)EAR99
Part StatusActive
HTS8541290095
AutomotiveNo
PPAPNo
Product CategoryPower MOSFET
MaterialSi
ConfigurationSingle Dual Drain
Process TechnologyVDMOS
Channel ModeDepletion
Channel TypeN
Number of Elements per Chip1
Maximum Drain Source Voltage (V)350
Maximum Gate Source Voltage (V)卤20
Maximum Continuous Drain Current (A)0.135
Maximum Gate Source Leakage Current (nA)100
Maximum IDSS (uA)180000 (Min)
Maximum Drain Source Resistance (mOhm)35000@0V
Typical Input Capacitance @ Vds (pF)60@25V
Typical Reverse Transfer Capacitance @ Vds (pF)3@25V
Typical Output Capacitance (pF)6
Maximum Power Dissipation (mW)1300
Typical Fall Time (ns)20 (Max)
Typical Rise Time (ns)15 (Max)
Typical Turn-Off Delay Time (ns)15 (Max)
Typical Turn-On Delay Time (ns)10 (Max)
Minimum Operating Temperature (C)-55
Maximum Operating Temperature (C)150
PackagingTape and Reel
Maximum Positive Gate Source Voltage (V)20
Maximum Power Dissipation on PCB @ TC=25C (W)1.3
Maximum Pulsed Drain Current @ TC=25C (A)0.3
Typical Reverse Recovery Time (ns)800
Maximum Diode Forward Voltage (V)1.8
MountingSurface Mount
Package Height1.6 (Max)
Package Width2.6 (Max)
Package Length4.6 (Max)
PCB changed3
TabTab
Supplier PackageSOT-89
Pin Count4



Details Of DN3135N8-G


Details Of DN3135N8-GSpecifications Of DN3135N8-GZkhk DN3135N8-GZkhk Details Of DN3135N8-G

Products
GET IN TOUCH
If you have any product inquiries, technician support, or after-service support about electronic components, please feel free to contact us.
Tel:
+86-13728884832
Address:
Room 318, Building A, Shanhai Dinghui, Bantian Street, Longgang District, Shenzhen City, Guangdong Province