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Integrated circuit is a general term for semiconductor component products, including integrated circuit boards, diodes, triodes and other special electronic components. Different electronic components are often classified and distinguished by usage/ integrated circuit function/ fabrication process/ integration level.

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SS8550DBU

Name: SS8550DBU
Brand: Jinjiana Electronic Co.,Ltd.
Availability: InStock

Buy SS8550DBU

Features Of SS8550DBU

1. PNP Configuration: The transistor operates in a PNP configuration, making it suitable for use in complementary circuits.

2. High Current Gain: The device has a high current gain (hFE) of up to 700, which makes it suitable for use in low-power amplification circuits.

3. Low Noise: The SS8550DBU transistor has a low noise level, making it ideal for use in low noise amplifier circuits.

4. Small Signal Amplification: The device can be used in small signal amplification such as audio amplifiers, voltage regulators, and switching applications.

5. High Breakdown Voltage: The transistor has a high breakdown voltage of up to -25V, which makes it ideal for use in high voltage circuits.

6. Bipolar Junction Transistor: The device is a bipolar junction transistor (BJT), which means it is a current-controlled device and can switch on and off quickly.

7. Small Size: The device has a small size and can be mounted on a small PCB or a breadboard.

8. RoHS Compliant: The transistor is RoHS compliant, which means it does not contain any hazardous substances.

9. Wide Temperature Range: The SS8550DBU transistor has a wide operating temperature range of -55°C to +150°C, making it suitable for use in extreme environments.

10. Low Cost: The SS8550DBU transistor is low-cost and widely available, making it ideal for use in low-cost electronic devices.

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

Complimentary to SS8050
Collector Current: I_C=1.5A
Collector Power Dissipation: P_C=2W (T_C=25℃)

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T_a=25℃ unless otherwise noted

Symbol	Parameter	Ratings	Units
V_CBO	Collector-Base Voltage	-40	V
V_CEO	Collector-Emitter Voltage	-25	V
V_EBO	Emitter-Base Voltage	-6	V
I_C	Collector Current	-1.5	A
P_C	Collector Power Dissipation	1	W
T_J	Junction Temperature	150	℃
T_STG	Storage Temperature	-65~150	℃

Electrical Characteristics

T_a=25°Cunless otherwise noted

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Units
BV_CBO	Collector-Base Breakdown Voltage	I_C=-100μA, I_E=0	-40			V
BV_CEO	Collector-Emitter Breakdown Voltage	I_C=-2mA, I_B=0	-25			V
BV_EBO	Emitter-Base Breakdown Voltage	I_E=-100μA, I_C=0	-6			V
I_CBO	Collector Cut-off Current	V_CB=-35V, I_E=0			-100	nA
I_EBO	Emitter Cut-off Current	V_EB=-6V, I_C=0			-100	nA
h_FE1 h_FE2 h_FE3	DC Current Gain	V_CE=-1V, I_C=-5mA V_CE=-1V, I_C=-100mA V_CE=-1V, I_C=-800mA	45 85 40	170 160 80	300
V_CE(sat)	Collector-Emitter Saturation Voltage	I_C=-800mA, I_B=-80mA		-0.28	-0.5	V
V_BE(sat)	Base-Emitter Saturation Voltage	I_C=-800mA, I_B=-80mA		-0.98	-1.2	V
V_BE(on)	Base-Emitter on Voltage	V_CE=-1V, I_C=-10mA		-0.66	-1.0	V
C_ob	Output Capacitance	V_CB=-10V, I_E=0 f=1MHz		15		pF
f_T	Current Gain Bandwidth Product	V_CE=-10V, I_C=-50mA	100	200		MHz