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FDMC86520L

Name: FDMC86520L
Brand: Jinjiana Electronic Co.,Ltd.
Availability: InStock

Buy FDMC86520L

FDMC86520L of Basic Components Used in Electronics

Features Of FDMC86520L

Max r_DS(on) = 7.9 mΩ at V_GS = 10 V, I_D = 13.5 A
Max r_DS(on) = 11.7 mΩ at V_GS = 4.5 V, I_D = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant

General Description of FDMC86520L

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. lt has been optimized for low gate charge, low r_DS(on, fast switching speed and body diode reverse recovery performance.

Applications of FDMC86520L

Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch

MOSFET Maximum Ratings of FDMC86520L

T_A=25℃ unless otherwise noted

Symbol	Parameter	Ratings	Units
V_DS	Drain to Source Voltage	60	V
V_GS	Gate to Source Voltage	±20	V
l_D	Drain Current - Continuous(Package limited) T_C=25℃	22	A
	- Continuous (Silicon limited) T_C=25℃	55
	- Continuous T_A=25℃ (Note 1a)	13.5
	- Pulsed	60
EAs	Single Pulse Avalanche Energy (Note 3)	79	mJ
Po	Power Dissipation T_C=25℃	40	W
Po	Power Dissipation T_A=25℃ (Note 1a)	2.3	W
T_J,T_STG	Operating and Storage Junction Temperature Range	-55 to +150	℃

Thermal Characteristics

R_θJC	Thermal Resistance, Junction to Case	3.1	℃/W
R_θJA	Thermal Resistance, Junction to Ambient (Note 1a)	53	℃/W

Electrical Characteristics of FDMC86520L

T_J=25℃ unless otherwise noted

Symbol

Parameter

Test Conditons

Min

Typ

Max

Units

Off Characteristics

BV_DSS	Drain to Source Breakdown Voltage	I_D=250μA, V_GS=0V	60			V
△BV_DSS —— △T_J	Breakdown Voltage Temperature Coefficient	I_D=250μA, referenced to 25℃		29		mV/℃
I_DSS	Zero Gate Voltage Drain Curent	V_DS=48 V, V_GS=0V			1	μA
I_GSS	Gate to Souroe Leakage Current	V_GS=±20V, V_DS=0V			±100	nA

On Characteristics

V_GS(th)	Gate to Souroe Threshold Voltage	V_GS=V_DS, I_D=250 μA	1	1.7	3	V
△V_GS(th) —— △T_J	Gate to Source Threshold Voltage Temperature Coeficient	I_D=250μA, referenced to 25℃		-7		mV/℃
r_DS(on)	Static Drain to Source On Resistanoe	V_GS=10V, I_D=13.5 A		6.5	7.9	mΩ
		V_GS=4.5V. I_D=11.5A		9.1	11.7
		V_GS=10V, I_D=13.5A. T_J=125℃		9	11
g_FS	Forward Transconductance	V_DS=5V, I_D=13.5A		49		S

Dynamic Characteristics

C_lss	Input Capacitance	V_DS=30V, V_GS=0V, f=1 MHz	3420	4550	pF
C_oss	Output Capacitance		638	850	pF
C_rss	Reverse Transfer Capacitance		25	40	pF
R_g	Gate Resistance		0.5		Ω

Switching Characteristics

t_d(on)	Turn-On Delay Time	V_DD=30V I_D=13.5A V_GS=10V, R_GEN=6Ω		15	30	ns
t_r	Rise Time			5.2	10	ns
t_d(off)	Turn-Of Delay Time			32	55	ns
t_r	Fall Time			3.4	10	ns
Q_g(TOT)	Total Gate Charge	V_GS=0V to 10V	V_DD=30V	45	64	nC
Q_g(TOT)	Total Gate Charge	V_GS=0V to 4.5V	V_DD=30V	21	30	nC
Q_gs	Total Gate Charge	I_D=13.5A		9.6		nC
Q_gd	Gate to Drain "Miller" Charge	I_D=13.5A		4.9		nC

Drain-Source Diode Characteristics

V_SD	Source to Drain Diode Forward Voltage	V_GS=0V, I_S=13.5A (Note 2)	0.82	1.3	V
V_SD	Source to Drain Diode Forward Voltage	V_GS=0V, I_S=2 A (Note 2)	0.71	1.2	V
t_rr	Reverse RecoveryTime	l_F=13.5A, di/dt=100 A/μs	38	62	ns
Q_rr	Reverse Recovery Charge	l_F=13.5A, di/dt=100 A/μs	21	34	nC

NOTES:

1. R_θJA is determined with the device mounted on a 1 in²pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material R_θJC is guaranteed by design while R_θCA is determined by the user's board design.

2. PulseTest: Pulse Width<300μs, Duty cycle<2.0%.

3. Starting T_J=25℃; N-ch: L=0.3mH, I_AS=23A, V_DD=54V, V_QS=10V.