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2SA1208S-AE
Features Of 2SA1208S-AE

1. PNP Configuration: The transistor operates in PNP configuration, making it suitable for use in complementary circuits.


2. High Gain: The device has a high current gain (hFE) of up to 300, which makes it suitable for use in small signal amplification circuits.


3. Low Noise: The 2SA1208S-AE transistor has a low noise level, making it ideal for use in low noise amplifier circuits.


4. High Breakdown Voltage: The transistor has a high breakdown voltage of up to -120V, which makes it ideal for use in high voltage circuits.


5. Maximum Continues Current: The device can handle a maximum continuous current (IC) of 1.5A, which makes it ideal for use in low current applications.


6. Avalanche Energy: The 2SA1208S transistor also has good avalanche energy characteristics, making it suitable for applications that require high speed switching.


7. Small Size: The device has a small size and can be mounted on a small PCB or a breadboard.


8. RoHS Compliant: The transistor is RoHS compliant, which means it does not contain any hazardous substances.


9. Wide Temperature Range: The device has a wide operating temperature range of -55°C to +150°C, which makes it suitable for use in extreme temperature environments.


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