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2SC3058
Features Of 2SC3058
  • NPN bipolar junction transistor

  • High power RF transistor, commonly used in RF power amplifier circuits for mobile phones

  • High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency

  • Rated for a maximum collector-emitter voltage (VCEO) of 75V and a maximum collector current (IC) of 800mA

  • Low-level input impedance and high-current gain

  • Fast switching speed and high-frequency response

  • TO-220 package

  • Suitable for use in a wide range of RF power amplifier applications, such as mobile phones, wireless communication devices, and other wireless applications.

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