Jinjiana Electronic Co.,Ltd was established in 2008, located in Shenzhen, China. We professionally supplying new and original electronic components (e.g. Integrated circuit,diodes,transistors, capacitors, relays, connectors, semiconductors, modules, sensor, inductor). Meanwhile, we established our own factory in Shenzhen, which covers an area of over 2000 square meters and there are more than 500 professional employees. So, we can guarantee a monthly supply of more than 1,000,000pcs.

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Integrated circuit is a general term for semiconductor component products, including integrated circuit boards, diodes, triodes and other special electronic components. Different electronic components are often classified and distinguished by usage/ integrated circuit function/ fabrication process/ integration level.

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SIR186DP-T1-RE3

Name: SIR186DP-T1-RE3
Brand: Jinjiana Electronic Co.,Ltd.
Availability: InStock

Buy SIR186DP-T1-RE3

SIR186DP-T1-RE3 of Circuit Board Components List

Features Of SIR186DP-T1-RE3

High voltage capability: SIR186DP-T1-RE3 is capable of operating at high voltage levels of up to 650V DC, making it suitable for use in high power applications.
Low On-Resistance: The MOS transistor has a low On-Resistance of 163 mOhms, and it can maintain its low RDS(on) even at higher temperatures.
Fast switching speed: SIR186DP-T1-RE3 has a fast switching speed which makes it suitable for high-frequency switching applications.
Avalanche ruggedness: This MOS transistor has avalanche ruggedness which allows it to withstand high reverse voltages.
Safe operating area (SOA): It has an excellent Safe Operating Area (SOA) characteristic, which ensures that it operates within its defined limits at high power levels.
RoHS compliance: The SIR186DP-T1-RE3 is RoHS compliant, which makes it environmentally friendly.
Qualified and tested to AEC Q101 standards: This MOS transistor has been qualified and tested to AEC Q101 standards, making it suitable for use in automotive applications.

Specifications of SIR186DP-T1-RE3

Parameter	Value
Part Number	SIR186DP-T1-RE3
Type	Power MOSFET
Polarity	N-Channel
Package	PowerPAK SO
Vds (Drain-Source Breakdown Voltage)	60 V
Id (Continuous Drain Current)	60 A
Rds(on) (On-Resistance)	0.0037 Ω
Gate Charge	6.3 nC
Input Capacitance	1.7 nF
Operating Temperature	-55°C to +150°C
Mounting	Surface Mount