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NVHL040N65S3F
Features Of NVHL040N65S3F
  • 700 V  @TJ = 150°C

  • Typ. RDS(on) = 33.8 mΩ

  • Ultra Low Gate Charge (Typ. Qg = 153 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1333 pF)

  • 100% Avalanche Tested

  • AEC−Q101 Qualified and PPAP Capable

Details of NVHL040N65S3F


NVHL040N65S3F


High Frequency Transistor

Transistor At High Frequency

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