700 V @TJ = 150°C
Typ. RDS(on) = 33.8 mΩ
Ultra Low Gate Charge (Typ. Qg = 153 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1333 pF)
100% Avalanche Tested
AEC−Q101 Qualified and PPAP Capable